參數(shù)資料
型號(hào)： SI8401DB-T1
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述： P通道20 - V（下局副局長(zhǎng)）MOSFET的低閾值
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 83K
代理商： SI8401DB-T1
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
Pin Compatible to Industry Standard Si3443DV
APPLICATIONS
PA, Battery and Load Switch
Battery Charger Switch
PA Switch
Si8401DB
Vishay Siliconix
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.065 @ V
GS
=
4.5 V
4.9
0.095 @ V
GS
=
2.5 V
4.1
MICRO FOOT
S
G
D
P-Channel MOSFET
3
2
4
1
S
D
D
G
Bump Side View
Backside View
Device Marking: 8401
xxx = Date/Lot Traceability Code
8401
xxx
Ordering Information:
Si8401DB-T1
Si8401DB-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.9
3.6
T
A
= 70 C
3.9
2.8
A
Pulsed Drain Current
I
DM
10
continuous Source Current (Diode Conduction)
a
I
S
2.5
2.5
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.77
1.47
W
T
A
= 70 C
1.77
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Package Reflow Conditions
b
VPR
215/245
c
C
IR/Convection
220/250
c
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
35
45
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
16
20
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Package reflow conditions for lead-free.
相關(guān)PDF資料
PDF描述
SI8401DB-T1-E3 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI8401DB Single P-Channel MOSFET;
SI8402DB 20-V N-Channel 1.8-V (G-S) MOSFET
SI8402DB-T1 20-V N-Channel 1.8-V (G-S) MOSFET
SI8417DB P-Channel 1.8-V (G-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI8401DB-T1-E1 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI8401DB-T1-E3 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI8401DB-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI-8401L 制造商:Sanken Electric Co Ltd 功能描述:Switching Mode Regulator 4-Pin 制造商:Sanken Electric Co Ltd 功能描述:IC REG BUCK 5V 0.5A EI-12.5
Si8402AB-B-IS 功能描述:隔離器接口集成電路 2.5 KV BIDIRECTIONAL I2C ISOLATOR 1.7MHz RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 傳播延遲時(shí)間: 電源電壓-最大:5.5 V 電源電壓-最小:3 V 電源電流:3.6 mA 功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:SOIC-8 封裝:Tube
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