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參數(shù)資料
| 型號(hào)： | SI84-820 |
| 廠商： | Delta Electronics, Inc. |
| 英文描述： | SMT Power Inductor |
| 中文描述： | SMT功率電感 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | SI84-820 |
1. Tolerance of inductance
10~330uH 10%
2. I : rated current. L<10%, T<45
at I
o
C
3. Operating temperature: -20
to 105
(including self-temperature rise)
o
o
C
C
RATED
RATED
SMT Power Inductor
SI84 Type
Features
Mechanical Dimension:
8.0
B
C
8.0
1.4
D
A
Low profile (4.0mm max. Height) SMD type.
Unshielded.
Self-leads, suitable for high density
High energy storage and low DCR.
Provided with embossed carrier tape packing.
Ideal for power source circuits, DC-DC converter,
DC-AC inverters inductor application.
In addition to the standard versions shown here,
customized inductors are available to meet your exact requirements.
mounting.
DELTA ELECTRONICS, INC.
(TAOYUAN PLANT CPBG)
Electrical Characteristics:
0.00
0.01
0.10
1.00
10.00
CURRENT (A)
1.00
10.00
100.00
1000.00
INDUCTANCE(uH)
100
120
150
180
220
270
330
390
470
560
680
820
101
121
151
181
221
271
331
252, SAN YING ROAD, KUEISAN INDUSTRIAL ZONE, TAOYUAN SHIEN, 333, TAIWAN, R.O.C.
TEL: 886-3-3591968; FAX: 886-3-3591991
http://www.deltaww.com
UNIT:mm/inch
A = 7.8 0.2/0.307 0.008
B = 7.0 0.2/0.276 0.008
C = 3.5 0.5/0.138 0.020
D = 1.5 0.2/0.059 0.008
At 25
: 1KHz, 1V
o
C
2
1
RECOMMENDED PAD
L
DCR
I
PART NO.
(uH)
( ) MAX
(Adc)
RATED
SI84 - 100
10
0.080
1.44
SI84 - 120
12
0.089
1.39
SI84 - 150
15
0.104
1.24
SI84 - 180
18
0.111
1.12
SI84 - 220
22
0.129
1.07
SI84 - 270
27
0.153
0.94
SI84 - 330
33
0.170
0.85
SI84 - 390
39
0.217
0.74
SI84 - 470
47
0.252
0.68
SI84 - 560
56
0.282
0.64
SI84 - 680
68
0.332
0.59
SI84 - 820
82
0.406
0.54
SI84 - 101
100
0.481
0.51
SI84 - 121
120
0.536
0.49
SI84 - 151
150
0.755
0.40
SI84 - 181
180
1.022
0.36
SI84 - 221
220
1.200
0.31
SI84 - 271
270
1.306
0.29
SI84 - 331
330
1.495
0.28
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI84-820K | 制造商:DELTA 制造商全稱(chēng):Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI8483DB-T2-E1 | 功能描述:MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8487DB-T1-E1 | 功能描述:MOSFET -30V 31mOhm@10V 7.7A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8489EDB | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET |
| SI8489EDB-T2-E1 | 功能描述:MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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