- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365555 > SI7892DP-T1-E3 (Vishay Intertechnology,Inc.) N-Channel, 30-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SI7892DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel, 30-V (D-S) MOSFET |
| 中文描述： | N溝道，30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 58K |
| 代理商： | SI7892DP-T1-E3 |
Specification Comparison
Vishay Siliconix
Document Number 74064
06-May-05
www.vishay.com
Si7892BDP vs. Si7892DP
Description:
Package:
Pin Out:
Part Number Replacements:
Si7892BDP-T1-E3 Replaces Si7892DP-T1-E3
Si7892BDP-T1-E3 Replaces Si7892DP-T1
Summary of Performance:
The Si7892BDP is the replacement to the original Si7892DP; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si7892BDP
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
Avalanche Current
L = 0.1 mH
I
AS
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
N-Channel, 30-V (D-S) MOSFET
PowerPAK
SO-8
Identical
Si7892DP
30
+20
25
20
Unit
30
+20
25
20
V
I
D
60
4.1
60
4.5
I
S
40
5
3.2
50
5.4
3.4
A
P
D
W
-55 to 150
25
-55 to 150
23
°
C
°
C/W
Si7892BDP
Typ
Si7892DP
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.0
30
3.0
+100
1
1.0
30
3.0
+100
1
V
nA
μ
A
A
V
GS
= 10 V
V
GS
= 10 V
0.0034
0.0042
0.0037
0.0045
Drain-Source On-Resistance
V
GS
= 4.5 V
r
DS(on)
0.0047
0.0057
0.0048
0.006
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
g
fs
V
SD
85
0.75
80
0.75
S
V
1.2
1.2
C
iss
3775
NS
Output Capacitance
C
oss
630
NS
Reverse Transfer Capacitance
C
rss
Qg
Qgs
Qgd
Rg
295
NS
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
27
11.4
8.1
1.2
40
2.0
25
6.7
9.7
NS
35
2.4
nC
0.5
0.5
t
d(on)
20
30
17
30
Turn-On Time*
t
r
13
20
10
20
t
d(off)
62
100
65
130
Turn-Off Time*
t
f
20
35
35
60
Source-Drain Reverse Recovery Time
t
rr
40
60
50
80
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7894DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI7898DP | N-Channel 150-V (D-S) MOSFET |
| Si7900EDN | Specification Comparison |
| Si7900AEDN | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| SI7900EDN | Dual N-Channel 20-V (D-S) MOSFET, Common Drain |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7894ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI7894ADP-T1-E3 | 功能描述:MOSFET 30V 25A 1.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7894ADP-T1-GE3 | 功能描述:MOSFET 30V 25A 5.4W 3.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7894DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI7898DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。