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參數(shù)資料
| 型號(hào)： | SI5404BDC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N溝道的2.5 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | SI5404BDC |
SPICE Device Model Si5404BDC
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73127
08-Sep-04
www.vishay.com
1
N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si5404BDC | Specification Comparison |
| Si5404DC | Specification Comparison |
| SI5404DC | N-Channel 2.5-V (G-S) MOSFET |
| Si5404DC-T1 | N-Channel 2.5-V (G-S) MOSFET |
| SI5433BDC | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5404BDC_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) MOSFET |
| SI5404BDC-T1-E3 | 功能描述:MOSFET 20 Volt 7.5 Amp 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5404BDC-T1-GE3 | 功能描述:MOSFET 20V 7.5A 2.5W 28mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5404DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Specification Comparison |
| SI5404DC-T1 | 功能描述:MOSFET 20V 7.2A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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