參數(shù)資料
型號(hào): SI4925DY
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual P-Channel, Logic Level, PowerTrench MOSFET
中文描述: 6 A, 30 V, 0.032 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 5/5頁
文件大?。?/td> 65K
代理商: SI4925DY
Si4925BDY
Vishay Siliconix
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4925DY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8
SI4925DY-E3 功能描述:MOSFET 30V 6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4925DY-T1 功能描述:MOSFET 30V 6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4925DY-T1-E3 功能描述:MOSFET 30V 6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4925DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET