參數資料
型號： SI4480DY
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 80V N-Channel PowerTrench MOSFET
中文描述： 7600 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數： 1/5頁
文件大?。?/td> 93K
代理商： SI4480DY
Si4480DY
Rev.
A
Si4480DY
80V N-Channel PowerTrench
MOSFET
January
200
1
200
1
Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
80
±
20
7.6
50
2.5
1.2
1
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
4480
Si4480DY
Device
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
7.6 A, 80 V. R
DS(ON
)
= 0.029
@ V
GS
= 10 V
R
DS(ON)
= 0.033
@ V
GS
= 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
S
4
D
相關PDF資料
PDF描述
SI4542 30V Complementary PowerTrench MOSFET
SI4542D 30V Complementary PowerTrench MOSFET
SI4542DY 30V Complementary PowerTrench MOSFET
SI4822 Single N-Channel, Logic Level, PowerTrench MOSFET
SI4822DY Single N-Channel, Logic Level, PowerTrench MOSFET
相關代理商/技術參數
參數描述
SI4480DY-E3 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1-E3 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4480DY-T1-GE3 功能描述:MOSFET 80V 6.0A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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