參數(shù)資料
型號(hào): SI4346DY-T1-E3
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 86K
代理商: SI4346DY-T1-E3
Si4346DY
Vishay Siliconix
New Product
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg72958
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4346DY-T1-E3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 8A SOIC
SI4346DY-T1-GE3 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4348DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4348DY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4348DY-T1-E3 功能描述:MOSFET 30V 11A 2.5W 12.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube