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參數(shù)資料
| 型號： | Si4112G-BM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| 中文描述： | 雙波段射頻合成器集成的GSM和GPRS無線通訊和VCO |
| 文件頁數(shù)： | 4/32頁 |
| 文件大?。?/td> | 466K |
| 代理商： | SI4112G-BM |
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Si4133G
4
Rev. 1.1
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
T
A
–20
25
85
°C
Supply Voltage
V
DD
2.7
3.0
3.6
V
Supply Voltages Difference
V
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
–0.3
—
0.3
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
Symbol
Value
Unit
DC Supply Voltage
V
DD
–0.5 to 4.0
V
Input Current
3
I
IN
±10
mA
Input Voltage
3
V
IN
–0.3 to V
DD
+0.3
V
Storage Temperature Range
T
STG
–55 to 150
o
C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SENB, PWDNB and XIN.
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