參數(shù)資料
型號: SI3861DV
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 外設(shè)及接口
英文描述: GT 8C 8#16 SKT RECP WALL
中文描述: 9 A BUF OR INV BASED PRPHL DRVR, PDSO6
封裝: SOT-6
文件頁數(shù): 1/4頁
文件大?。?/td> 120K
代理商: SI3861DV
August 2001
2001 Fairchild Semiconductor Corporation
Si3861DV Rev B(W)
Si3861DV
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
-6
package.
Applications
Load switch
Power management
Features
–2.8 A, –8 V. R
DS(ON)
= 55 m
@ V
GS
= –4.5 V
R
DS(ON)
= 70 m
@ V
GS
= –2.5 V
R
DS(ON)
= 100 m
@ V
GS
= –1.8 V
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
3
2
1
4
5
6
Q1
Q2
Vout,C1
Vout,C1
R2
Vin,R1
ON/OFF
R1,C1
See Application Circuit
Equivalent Circuit
V
DROP
+
IN
OUT
ON/OFF
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
IN
V
ON/OFF
I
Load
Parameter
Ratings
±
8
–0.5 to 8
–2.8
–9
0.7
–55 to +150
Units
V
V
A
Maximum Input Voltage
High level ON/OFF voltage range
Load Current
– Continuous
– Pulsed
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1)
P
D
T
J
, T
STG
(Note 1)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
180
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.
861
Si3861DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
S
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