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參數(shù)資料
| 型號： | SI3454ADV-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | SI3454ADV-T1-E3 |
Si3454ADV
Vishay Siliconix
www.vishay.com
2
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 C
25
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
15
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 4.5 A
0.048
0.060
V
GS
= 4.5 V, I
D
= 3.8 A
0.070
0.085
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.5 A
10
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
9
15
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 4.5 A
2.5
nC
Gate-Drain Charge
Q
gd
1.5
Gate Resistance
R
g
0.5
2.9
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
g
= 6
10
20
Turn-Off Delay Time
t
d(off)
I
D
20
35
ns
Fall Time
t
f
7
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
40
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0
1
2
3
4
5
6
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 5 V
T
C
=
55 C
125 C
3 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
4 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3454ADV-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI3454ADV-T1-GE3 | 功能描述:MOSFET 30V 4.5A 2.0W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3454-B01-IM | 功能描述:IC POE PSE 4 PORT 802.3AT 38QFN 制造商:silicon labs 系列:- 零件狀態(tài):在售 類型:控制器（PSE），DC/DC 通道數(shù):4 內(nèi)部開關(guān):無 輔助作用:無 標(biāo)準(zhǔn):802.3at（PoE+），802.3af（PoE） 電壓 - 電源:44 V ~ 57 V 電流 - 電源:2mA 工作溫度:-40°C ~ 85°C 標(biāo)準(zhǔn)包裝:406 |
| SI3454CDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI3454CDV-T1-E3 | 功能描述:MOSFET 30V 4.2A 1.5W 50mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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