Si3230
Preliminary Rev. 0.96
9
Not
Recommended
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Table 7. Si3230 DC Characteristics, VDDA = VDDD = 3.3 V
(VDDA,VDDD = 3.13 V to 3.47 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDD
D
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU:IO = –2 mA
SDO:IO = –4 mA
VDDD – 0.6
—
V
DOUT: IO = –40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO = 2 mA
SDO,INT:IO = 4 mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A
Table 8. Power Supply Characteristics
(VDDA,VDDD = 3.13 V to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Typ1
Typ2
Max
Unit
Power Supply Current,
Analog and Digital
IA + ID
Sleep (RESET = 0)
0.10.130.2
mA
Open
33
42.8
49
mA
Active on-hook
ETBO = 4 mA, codec and Gm
amplifier powered down
37
53
68
mA
Active OHT
ETBO = 4 mA
57
72
83
mA
Active off-hook
ETBA = 4 mA, ILIM = 20 mA
73
88
99
mA
Ground-start
36
47
55
mA
Ringing
Sinewave, REN = 1, VPK = 56 V
455565
mA
VDD Supply Current (Si3201)
IVDD
Sleep mode, RESET = 0
—
100
—
A
Open (high impedance)
—
100
—
A
Active on-hook standby
—
110
—
A
Forward/reverse active off-hook, no
ILOOP, ETBO = 4 mA, VBAT = –24 V
—1—
mA
Forward/reverse OHT, ETBO = 4 mA,
VBAT = –70 V
—1—
mA