Si3210/Si3211
Rev. 1.61
11
Not
Recommended
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Table 5. Monitor ADC Characteristics
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Nonlinearity
(6-bit resolution)
DNLE
–1/2
—
1/2
LSB
Integral Nonlinearity
(6-bit resolution)
INLE
–1
—
1
LSB
Gain Error (Voltage)
—
10
%
Gain Error (Current)
—
20
%
Table 6. Si321x DC Characteristics, VDDA =VDDD =5.0 V
(VDDA,VDDD = 4.75 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDDD
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU:
IO = –4 mA SDO,
DTX:IO =–8mA
VDDD – 0.6
—
V
DOUT: IO =–40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO =4mA
SDO,INT,DTX:IO =8mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A
Table 7. Si321x DC Characteristics, VDDA =VDDD =3.3 V
(VDDA,VDDD = 3.13 to 3.47 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDDD
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU: IO =–2 mA
SDO, DTX:IO =–4mA
VDDD – 0.6
—
V
DOUT: IO = –40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO =2mA
SDO,INT,DTX:IO =4mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A