![](http://datasheet.mmic.net.cn/Silicon-Laboratories-Inc/SI2494-A-GM_datasheet_102086/SI2494-A-GM_9.png)
Si2494/39
Rev. 1.0
9
SCLK cycle time
tSCK
224
—
ns
Inactive time between SS actives
tNSS_INACT
81
—
—ns
Table 6. Thermal Conditions
Parameter
Symbol
Test
Condition
Min
Typ
Max
Unit
Thermal Resistance
(Si2494/39)
JA
QFN-38
—
35
—
°C/W
Thermal Resistance
(Si3018)
JA
SOIC-16
—
77
—
°C/W
Maximum Junction
Temperature
(Si2494/39)
T
QFN-38
—
105
°C
Maximum Junction
Temperature (Si3018)
T
SOIC-16
—
110
°C
Table 7. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
DC Supply Voltage
VD
4.1
V
Input Current, Si2494/39 Digital Input Pins
IIN
±10
mA
Digital Input Voltage
VIND
–0.3 to (VD + 0.3)
V
CLKIN/XTALI Input Voltage
VXIND
–0.3 to (VD + 0.3)
V
Operating Temperature Range
TA
–10 to 100
°C
Storage Temperature Range
TSTG
–40 to 150
°C
Note:
Permanent device damage may occur if the above absolute maximum ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 5. Switching Characteristics1 (Continued)
(VD = 3.0 to 3.6 V, TA = 0 to 70 °C for F-grade, TA = –40 to 85 °C for G-grade)
Parameter
Symbol
Min
Typ
Max
Unit
Notes:
1.
All timing is referenced to the 50% level of the waveform. Input test levels are VIH =VD – 0.4 V, VIL =0.4 V.
2.
With 32.768 kHz clocking, allow 500 to the reset low-to-high minimum pulse on power-up and wake-from-power-down
conditions.