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參數(shù)資料
| 型號(hào)： | SI2318DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel; MOSFET for general applications |
| 中文描述： | N溝道;一般MOSFET的應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 79K |
| 代理商： | SI2318DS |
Si2318DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(
BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 32 V, V
GS
= 0 V
V
DS
= 32 V, V
GS
= 0 V, T
J
= 55 C
V
DS
4.5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.9 A
V
GS
= 4.5 V, I
D
= 3.5 A
V
DS
= 10 V, I
D
= 3.9 A
I
S
= 1.25 A, V
GS
= 0 V
40
V
Gate-Threshold Voltage
1
3
Gate-Body Leakage
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
0.5
A
10
On-State Drain Current
a
I
D(on)
6
A
Drain Source On Resistance
Drain-Source On-Resistance
a
r
DS(on)
0.036
0.045
0.045
0.058
Forward Transconductance
a
g
fs
V
SD
11
S
Diode Forward Voltage
Dynamic
b
0.8
1.2
V
Total Gate Charge
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
10
15
Gate-Source Charge
V
= 20 V, V
= 10 V, I
= 3.9 A
DS
GS
1.6
nC
Gate-Drain Charge
D
2.1
Gate Resistance
1.8
Input Capacitance
540
Output Capacitance
V
= 20 V, V
= 0 V, f = 1 MHz
DS
GS
80
pF
Reverse Transfer Capacitance
45
Switching
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
5
10
Rise Time
V
= 20 V, R
= 20
1.0 A, V
GEN
= 10 V, R
G
= 6
12
20
ns
Turn-Off Delay Time
I
D
20
30
Fall-Time
15
25
Notes
a.
b.
Pulse test: PW
Guaranteed by design, not subject to production testing.
300 s duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
4
8
12
16
20
0
2
4
6
8
10
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
1, 2 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2318DS_13 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SI2318DS-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SI2318DS-T1-E3 | 功能描述:MOSFET 40V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2318DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 3.9A TO-236 |
| SI2318DS-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-CHANNEL 40-V (D-S) MOSFET |
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