參數(shù)資料
型號(hào): Si2301BDS-T1
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 2.5-V (G-S) MOSFET
中文描述: P通道的2.5 V(GS)的MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 39K
代理商: SI2301BDS-T1
Si2301ADS
Vishay Siliconix
New Product
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
0.130 @ V
GS
= –4.5 V
–2.0
–20
0.190 @ V
GS
= –2.5 V
–1.6
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
–2.0
–1.75
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 70 C
I
D
–1.6
–1.4
Pulsed Drain Current
a
I
DM
–10
A
Continuous Source Current (Diode Conduction)
b
I
S
–0.75
–0.6
T
A
= 25 C
0.9
0.7
Power Dissipation
b
T
A
= 70 C
P
D
0.57
0.45
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
115
140
Maximum Junction-to-Ambient
c
R
thJA
140
175
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Surface Mounted on FR4 Board.
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
相關(guān)PDF資料
PDF描述
SI2301DS P-Ch 20-V (D-S) 1.25-W, 2.5-V MOSFET
SI2301DS-T1 P-Channel 1.25-W, 2.5-V MOSFET
SI2303ADS P-Channel, 30-V (D-S) MOSFET
SI2303DS P-Channel 30-V (D-S) MOSFET
SI2303BDS P-Channel, 30-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI2301BDS-T1-E3 功能描述:MOSFET 20V 2.0A 0.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI2301BDS-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI2301BDS-T1-GE3 功能描述:MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI2301CDS 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
Si2301CDS-T1-E3 功能描述:MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube