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參數(shù)資料
| 型號(hào)： | SI1303DL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | P通道的2.5 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | SI1303DL |
Si1303DL
Vishay Siliconix
Document Number: 71075
S-03721—Rev. C, 07-Apr-03
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.430 @ V
GS
= -4.5 V
-0.72
-20
0.480 @ V
GS
= -3.6 V
-0.68
0.700 @ V
GS
= -2.5 V
-0.56
SOT-323
SC-70 (3-LEADS)
1
2
3
Top View
G
S
D
Marking Code
LA
XX
Lot Traceability
Part # Code
Y
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-0.72
-0.67
T
A
= 70 C
-0.58
-0.54
A
Pulsed Drain Current
I
DM
-2.5
Continuous Diode Current (Diode Conduction)
a
I
S
-0.28
-0.24
Maximum Power Dissipation
a
T
A
= 25 C
P
D
0.34
0.29
W
T
A
= 70 C
0.22
0.19
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
315
375
Steady State
360
430
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
285
340
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1303DL_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI1303DLT1 | 制造商:Vishay Intertechnologies 功能描述: |
| SI1303DL-T1 | 功能描述:MOSFET 20V 0.72A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1303DL-T1-E3 | 功能描述:MOSFET 20V 0.72A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1303DL-T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR |
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