參數(shù)資料
型號(hào): SHDC626031N
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, TO-257, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 64K
代理商: SHDC626031N
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4284, REV. E
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 8 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
Ceramic Seal Option – For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
600
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC, for part numbers with P and
N suffixes)
IO
8
Amps
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC, for part numbers with Single
and D suffixes)
IO
4
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, TC = 25
OC
IFRM
20
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10
μs, Pulse) per leg, T
C = 25
OC
IFSM
110
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC,
Pd
20
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE
For Common Cathode/Anode Configurations)
RθJC
5.6
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to
+200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP
TJ = 25°C
Pulsed (If = 4 A PER LEG) Vf
TJ = 175 °C
1.50
2.00
1.85
2.40
Volts
MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG) TJ = 25 °C
TJ = 175 °C
0.025
0.050
0.200
1.0
mA
TOTAL CAPACITIVE CHARGE (VR=600V IF=4A di/dt=500A/μs TJ=25°C) QC per leg
10
N/A
nC
MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg
CT
220
pF
SHD626031
SHD626031P
SHD626031N
SHD626031D
相關(guān)PDF資料
PDF描述
SHDC626150 10 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDT626150N 20 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDG626150N 20 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDT626150D 10 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDCG625051D 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
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