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參數(shù)資料
| 型號(hào)： | SHD3245D |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, SILICON, RECTIFIER DIODE, TO-258AA |
| 封裝： | HERMETIC, TO-258, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | SHD3245D |
HERMETIC SURFACE MOUNT RECTIFIERS - MELFs
ULTRAFAST RECOVERY (25 nsec
≤ trr ≤ 70 nsec)
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
MAX. AVG.
DC
OUTPUT
CURRENT
Amps
MAXIMUM
REVERSE
CURRENT
@ PIV
Amps
MAX. PEAK
FORWARD
VOLTAGE
(PULSED)
PEAK
1 CYCLE
SURGE
CURRENT
MAXIMUM
REVERSE
RECOVERY
TIME
THERM.
RESIS.
RθJEC
PACKAG
E
STYLE
Volt
s
55
°C
100
°C
25
°C
100
°C
V
A
Amps
nsec
°C/W
SSM160HE
SSM180HE
SSM1100HE
600
800
100
0
.75
.60
5.0
50
1.70
.75
20
-
70
10
MELF-1
1N6620U **
1N6621U **
1N6622U **
1N6623U **
1N6624U **
1N6625U **
SSM1120HE
200
400
600
800
900
100
0
120
0
2.0
1.5
°
1.2
1.0
0.5
1.0
150
200
1.60
1.80
1.95
2.10
2.0
1.5
20
15
-
30
50
60
20
1N5802US **
1N5804US **
1N5806US **
SSM120HE
50
100
150
200
2.5
1.0
50
.875
.975
1.0
35
25
20
MELF-A
1N5807US **
1N5809US **
1N5811US **
SSM320HE
50
100
150
200
6.0
8.0
5.0
150
.975
1.10
6.0
125
30
10
1N6626U **
1N6627U **
1N6628U **
1N6629U **
1N6630U **
1N6631U **
SSM3120HE
200
400
600
800
900
100
0
120
0
4.0
3.0
2.0
°
2.0
1.4
2.0
4.0
500
600
1.50
1.70
1.95
2.10
4.0
3.0
2.0
75
60
-
30
50
60
11
MELF-B
SSM65HE
SSM610HE
SSM615HE
SSM620HE
SSM640HE
SSM660HE
SSM680HE
SSM690HE
SSM6100HE
50
100
150
200
400
600
800
900
100
0
6
3
10
1000
1500
2000
0.95
1.20
1.60
1.70
6
125
-
70
8.0
MELF-E
*
available at JAN/JANTX levels
**
available at JAN/JANTX/JANTXV levels
Notes:
- All ratings are at T
A =
25
°C unless otherwise specified.
- Maximum operating and storage temperature range -65
°C to +175°C
T
EC
= Endcap temperature. Endcaps have to be heat sunk sufficiently to remove
dissipated power in order to achieve this rated current
- t
rr
conditions; I
f
= 0.5A, I
r
= 1.0A, I
rr
= 0.25A
Maximum thermal resistance, junction to endcaps
Rating at T
J
= 150
°C
° T
A
= 25
°C
± T
EC
= 110
°C
T
A
= 55
°C
Reverse recovery time conditions:
I
f
= I
r
= 1.0A, I
rr
= 0.1A di/ dt = 100A/
sec minimum
Reverse recovery time conditions: I
f
= I
r
= 0.5A, I
rr
= 0.5A
Output current rating at T
L
= 75
°C, L = .375”.
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