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參數(shù)資料
| 型號(hào)： | SHD126446 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | SHD126446 |
2000 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 924, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection
Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form
16
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
75
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 C, IAS = 0.75 A,
L = 40mH
16
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
0.75
A
Thermal Resistance
R JC
-
1.5
C/W
Max. Junction Temperature
TJ
-
-65 to +200
C
Max. Storage Temperature
Tstg
-
-65 to +175
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 16A, Pulse, TJ = 25 C
0.96
V
VF2
@ 16A, Pulse, TJ = 125 C
0.80
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 C
0.7
mA
IR2
@VR = 200V, Pulse,
TJ = 125 C
16
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
600
pF
Max. Reverse Recovery Time
trr
IF = 0.5 A, IR = 1.0 A,
IRM = 0.25 A, TJ = 25 C
50
nsec
SHD126446
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