參數(shù)資料
型號: SHD122511D
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED PACKAGE-3
文件頁數(shù): 1/3頁
文件大?。?/td> 83K
代理商: SHD122511D
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 867, REV. -
HIGH CURRENT HERMETIC SCHOTTKY
POWER MODULE
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
30
V
Maximum Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
(P) COMMON CATHODE
(N) COMMON ANODE
120
A
Maximum Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form (D) DOUBLER
60
A
Maximum Peak One Cycle
Non-Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(per leg)
860
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25
C, I
AS = 12 A,
L = 0.75 mH
54
mJ
Repetitive Avalanche Current
(per leg)
IAR
IAS decay linearly to 0 in 1
ms
limited by T
J max VA=1.5VR
12
A
Maximum Thermal Resis.
R
JC
-
0.4
C/W
Max. Junction Temperature
TJ
-
-65 to +150
C
Max. Storage Temperature
Tstg
-
-65 to +150
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25
C
0.53
V
(per leg)
VF2
@ 60A, Pulse, TJ = 125
C
0.43
V
Max. Reverse Current
IR1
@VR = 30V, Pulse,
TJ = 25
C
6.0
mA
(per leg)
IR2
@VR = 30V, Pulse,
TJ = 125
C
300
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25
C
fSIG = 1MHz,
VSIG = 50mV (p-p) (per leg)
3300
pF
SHD122511P
SHD122511N
SHD122511D
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