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參數(shù)資料
| 型號： | SHD117012NAS |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SHD-4A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | SHD117012NAS |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4564, REV. –
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Add Suffix "S" to Part Number for S-100 Screening.
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
DESCRIPTION: A 45-VOLT, 3.0 AMP DUAL POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-4/4A/4B
PACKAGE.
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
45
Volts
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=100
OC)
(Single)
IO
3.0
Amps
MAXIMUM DC OUTPUT CURRENT With Cathode Maintained (@ TC=100
OC)
(Common Cathode)
IO
6.0
Amps
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT
(t=8.3ms, Sine)
IFSM
55
Amps
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)
RθJC
1.8
°C/W
MAXIMUM OPERATING TEMPERATURE RANGE
Top/Tstg
-65 to
+ 150
°C
MAXIMUM STORAGE TEMPERATURE RANGE
Top/Tstg
-65 to
+ 150
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 3.0 Amps)
TJ = 25 °C
TJ = 125 °C
Vf
0.56
0.51
Volts
MAXIMUM REVERSE CURRENT (Ir @ 45V PIV)
TJ = 25 °C
TJ = 125 °C
Ir
0.3
14
mA
MAXIMUM JUNCTION CAPACITANCE
(Vr =5V)
CT
220
pF
SHD117012(P/N)
SHD117012(P/N)A
SHD117012(P/N)B
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