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參數(shù)資料
| 型號： | SHD114517B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SHD-3B, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 92K |
| 代理商： | SHD114517B |
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 729, REV. -
SILICON SCHOTTKY RECTIFIER
Ultra Low Forward Voltage Drop
Typical Voltage Drop 0.30V
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra Low Forward Voltage Drop
Soft Reverse Recovery at Low and High Temperature
Low Power Loss, High Efficiency
Very High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings(1):
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
20
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
60
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 msec, sine pulse
860
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25
C, I
AS = 3.4 A
L = 6.5 mH
37.6
mJ
Repetitive Avalanche
Current
IAR
IAS decay linearly to 0 in 1
ms
limited by T
J max VA=1.5VR
3.4
A
Max. Thermal Resistance
R
JC
-
0.35
C/W
Max. Junction Temperature
TJ
-
-55 to + 150
C
Max. Storage Temperature
Tstg
-
-55 to + 150
C
Electrical Characteristics(1):
Characteristics
Symbol
Condition
Typ.
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25
C
0.42
0.48
V
VF2
@ 60A, Pulse, TJ = 125
C
0.30
0.35
V
VF3
@ 60A, Pulse, TJ = 150
C
0.27
0.32
V
IR1
@VR = 20V, Pulse,
TJ = 25
C
0.66
6.0
mA
IR2
@VR = 20V, Pulse,
TJ = 125
C
510
660
mA
Max. Reverse Current
IR3
@VR = 5V, Pulse,
TJ = 100
C
50.4
90
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25
C
fSIG = 1MHz,
ISIG = 50mV (p-p)
3342
4050
pF
(1) in SHD package
SHD114517
SHD114517A
SHD114517B
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