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參數(shù)資料
| 型號： | SGU20N40 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | High input impedance |
| 中文描述： | 高輸入阻抗 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 149K |
| 代理商： | SGU20N40 |
2001 Fairchild Semiconductor Corporation
August 2001
SGR20N40L / SGU20N40L Rev. A1
IGBT
S
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount : SGR20N40L
Straight Lead : SGU20N40L
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
Description
SGR / SGU20N40L
400
±
6
150
45
-40 to +150
-40 to +150
Units
V
V
A
W
°
C
°
C
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25
°
C
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
(D-PAK)
R
θ
JA
(I-PAK)
Parameter
Typ.
--
--
--
Max.
3.0
50
110
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Application
Strobe flash.
G
C
E
D-PAK
G
E
C
I-PAK
G
E
C
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| SGW10N60RUF | FEEDTHRU CAPACITOR, 220PF 0.5A 100VFEEDTHRU CAPACITOR, 220PF 0.5A 100V; Capacitance:0.22nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGU20N40L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High input impedance |
| SGU20N40LTU | 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGU2N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGU2N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGU2N60UFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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