參數(shù)資料
型號: SGU04N60
廠商: SIEMENS A G
元件分類: 功率晶體管
英文描述: Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
中文描述: 9.4 A, 600 V, N-CHANNEL IGBT, TO-251AA
文件頁數(shù): 3/12頁
文件大?。?/td> 270K
代理商: SGU04N60
SGP04N60, SGB04N60
SGD04N60, SGU04N60
3
Mar-00
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
15
237
70
0.070
0.061
0.131
26
18
284
84
0.081
0.079
0.160
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
,
Energy losses include
“tail” and diode
reverse recovery.
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
16
264
104
0.115
0.111
0.226
26
19
317
125
0.132
0.144
0.277
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
Energy losses include
“tail” and diode
reverse recovery.
mJ
相關(guān)PDF資料
PDF描述
SGB15N120 Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT)
SGP15N120 Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT)
SGW15N120 Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT)
SGB15N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGP15N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
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