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參數(shù)資料
| 型號： | SGU04N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約快速IGBT技術(shù) |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 391K |
| 代理商： | SGU04N60 |
SGP04N60,
SGD04N60,
SGB04N60
SGU04N60
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
15
237
70
0.070
0.061
0.131
26
18
284
84
0.081
0.079
0.160
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
16
264
104
0.115
0.111
0.226
26
19
317
125
0.132
0.144
0.277
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGU06N60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
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| SGU15N40 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description |
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| SGU15N40LTU | 功能描述:IGBT 晶體管 SGU15N40LTU RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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