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參數(shù)資料
| 型號(hào)： | SGSD200 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Complemetary Silicon Power Darlington Transistors(功率達(dá)林頓晶體管) |
| 中文描述： | Complemetary硅功率達(dá)林頓晶體管（功率達(dá)林頓晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | SGSD200 |
SGSD100
SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARY PNP - NPN DEVICES
I
MONOLITHIC DARLINGTON
CONFIGURATION
APPLICATIONS:
I
GENERALPURPOSE SWITCHING
APPLICATION
I
GENERALPURPOSE AMPLIFIERS
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power
transistor
in
configuration
mounted
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
monolithic
in
Darlington
plastic
TO-218
INTERNAL SCHEMATIC DIAGRAM
September1997
1
2
3
TO-218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
SGSD100
SGSD200
80
80
25
40
6
10
130
-65 to 150
150
Unit
NPN
PNP
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltageand currentvalues arenegative.
V
V
A
A
A
A
W
o
C
o
C
1/6
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