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參數(shù)資料
| 型號： | SGR20N40L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Wide Noise Immunity IGBT Suitable for Strobe Flash applications(應用于閘門閃光的抗噪聲絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 400 V, N-CHANNEL IGBT, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 217K |
| 代理商： | SGR20N40L |
2000 Fairchild Semiconductor International
September 2000
SGR20N40L / SGU20N40L Rev. A
IGBT
S
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for strobe
applications
Features
High Input Impedance
High Peak Current Capability (150A)
Easy Gate Drive
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
Description
SGR / SGU20N40L
400
±
6
150
45
-40 to +150
-40 to +150
Units
V
V
A
W
°
C
°
C
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
°
C
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
(D-PAK)
R
θ
JA
(I-PAK)
Parameter
Typ.
--
--
--
Max.
3.0
50
110
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Application
Strobe Flash
G
C
E
D-PAK
G
E
C
I-PAK
G
E
C
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PDF描述 |
|---|---|
| SGU20N40L | Wide Noise Immunity IGBT Suitable for Strobe Flash applications(應用于閘門閃光的抗噪聲絕緣柵雙極晶體管(IGBT)) |
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| SGR5N60RUF | Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT)) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SGR20N40LTF | 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGR20N40LTM | 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGR22M1HBK-0407P | 功能描述:鋁質電解電容器 - 帶引線 50V .22uF 105C 4x7mm RoHS:否 制造商:Kemet 引線類型: 電容:220 uF 容差:20 % 電壓額定值:25 V 工作溫度范圍: 端接類型:Radial 外殼直徑:8 mm 外殼長度:11 mm 引線間隔:5 mm 產品:General Purpose Electrolytic Capacitors 封裝:Bulk |
| SGR22M1HBK-0407S | 制造商:Surge Components Inc 功能描述:CAP ALUM 0.22UF 50V ?20% 2000LHRS 4 X 7 - Bulk |
| SGR22M1HSA-0407S | 制造商:Surge Components Inc 功能描述:CAP ALUM 0.22UF 50V ?20% 2000LHRS 4 X 7 - Ammo Pack |
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