參數(shù)資料
型號(hào)： SGP13N60UFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： Ultra-Fast IGBT(超快速絕緣柵雙極晶體管(IGBT))
中文描述： 13 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 632K
代理商： SGP13N60UFD
2000 Fairchild Semiconductor International
September 2000
SGP13N60UFD Rev. A
IGBT
S
SGP13N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 6.5A
High Input Impedance
CO-PAK, IGBT with FRD : t
rr
= 37ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGP13N60UFD
600
±
20
13
6.5
52
8
56
60
25
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
2.0
3.5
62.5
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
TO-220
G C E
G
C
E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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