參數(shù)資料
型號(hào)： SGL50N60RUFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Short Circuit Rated IGBT
中文描述： 80 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁數(shù)： 1/8頁
文件大小： 623K
代理商： SGL50N60RUFD
2002 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. A1
IGBT
S
SGL50N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 50A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 50ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGL50N60RUFD
600
±
20
80
50
150
30
90
10
250
100
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
us
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.5
1.0
25
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
TO-264
G
C
E
相關(guān)PDF資料
PDF描述
SGL50N60 Short Circuit Rated IGBT
SGL50N60RUF Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Leaded Process Compatible:Yes
SGL5N150UF General Description
SGL5N60RUFD CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
SGL60N90DG3 Wide Noise Immunity IGBT(抗噪聲絕緣柵雙極晶體管(IGBT))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL50N60RUFDTU 功能描述:IGBT 晶體管 N-CH 600V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL50N60RUFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL5N150UF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description
SGL5N150UFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL5N60RUFDTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*