參數(shù)資料
型號(hào)： SGH30N60RUF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
中文描述： 48 A, 600 V, N-CHANNEL IGBT
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 565K
代理商： SGH30N60RUF
2002 Fairchild Semiconductor Corporation
SGH30N60RUF Rev. A1
IGBT
S
SGH30N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 30A
High input impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGH30N60RUF
600
±
20
48
30
90
10
235
90
-55 to +150
-55 to +150
Units
V
V
A
A
A
us
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@
T
C
=
25
°
C
@
T
C
= 100
°
C
I
CM (1)
T
SC
P
D
@
T
C
=100
°
C
@ T
C
=
25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
0.53
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G C E
TO-3P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGH30N60RUFD 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH30N60RUFDTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH30N60RUFTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH40N60 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGH40N60UF 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
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