參數(shù)資料
型號： SGF23N60UFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness
中文描述： 23 A, 600 V, N-CHANNEL IGBT
封裝： TO-3PF, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 607K
代理商： SGF23N60UFD
2001 Fairchild Semiconductor Corporation
June 2001
SGF23N60UFD Rev. A
IGBT
S
SGF23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
High Input Impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGF23N60UFD
600
±
20
23
12
92
12
92
75
30
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
1.6
3.0
40
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G C E
TO-3PF
G
C
E
相關(guān)PDF資料
PDF描述
SGF23N60UF CONNECTOR ACCESSORY
SGF30N60RUFD CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
SGF40N60UFD CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
SGF40N60 High Speed Switching
SGF80N60UFD CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGF23N60UFDM1TU 功能描述:IGBT 晶體管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGF23N60UFDTU 功能描述:IGBT 晶體管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGF23N60UFTU 功能描述:IGBT 晶體管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGF25 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C- to X-band local oscillator and amplifier
SGF25-TR-E 制造商:ON Semiconductor 功能描述:
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