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參數(shù)資料
| 型號(hào)： | SGB04N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約快速I(mǎi)GBT技術(shù) |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 391K |
| 代理商： | SGB04N60 |
SGP04N60,
SGD04N60,
SGB04N60
SGU04N60
1
Jul-02
Fast IGBT in NPT-technology
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP04N60
600V
4A
2.3V
150
°
C
TO-220AB
Q67040-S4443
SGB04N60
SGD04N60
SGU04N60
TO-263AB
TO-252AA(DPAK)
TO-251AA(IPAK)
Q67040-S4442
Q67041-A4708
Q67040-S4444
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
9.4
4.9
I
Cpuls
-
19
19
V
GE
E
AS
±
20
25
V
Avalanche energy, single pulse
I
C
= 4 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
50
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-251-3-1 (I-PAK)
(TO-251AA)
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PDF描述 |
|---|---|
| SGD04N60 | Fast IGBT in NPT-technology |
| SGP04N60 | Fast IGBT in NPT-technology |
| SGU04N60 | Fast IGBT in NPT-technology |
| SGB06N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB04N60_06 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGB06N60_06 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB06N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 12A 68W TO263-3 |
| SGB07N120 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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