參數(shù)資料
型號: SG-636PDE
廠商: 愛普生(中國)有限公司
英文描述: High-Frequency Crystal Oscillator(Small SOJ)(高頻晶體振蕩器(小型SOJ))
中文描述: 高頻晶體振蕩器(小SOJ)(高頻晶體振蕩器(小型SOJ))
文件頁數(shù): 1/1頁
文件大小: 61K
代理商: SG-636PDE
3
Crystal oscillator
1 OE
2 GND
3 OUT
4 V
DD
NO.
#4
#3
#1
0.5
5.08
(1.0)
(1.0)
3.6
#2
5
2
2
5
10.5 Max.
Recommended soldering pattern
External dimensions
Specifications (characteristics)
(Unit: mm)
(Unit: mm)
40.0000C
PDE 0615A
E
1.3
5.08
2
4
Pin terminal
SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636PDE
Reflowable and high density mounting type SMD package.
Operable 2.5V and Out put frequencies from 2.21675 MHz to
41.000 MHz.
Output enable(OE) function allow more low current consumption.
Item
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Duty
Output voltage
Output load condition
(fan out)
Output enable/disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
C-MOS level
C-MOS
C-MOS level
C-MOS level
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
f/f
0
lop
I
OE
t
w
/
t
V
OH
(I
OH
)
V
OL
(I
OL
)
C
L
V
IH
V
IL
t
TLH
t
THL
tosc
fa
S.R.
Specifications
Remarks
-55
°
C to +100
°
C
-20
°
C to +70
°
C
C: ±100 x 10
-6
5 mA Max.
3 mA Max.
45 % to 55 %
V
DD
-0.4 V Min.
-4 mA
0.4 V Max.
4 mA
Stored as bare product after unpacking
No load condition
OE=GND
C-MOS load: 1/2 V
DD
level
I
IH
=1 μA Max.(OE=V
DD
)
I
IL
=-1
μ
A Min. (OE=GND)
C-MOS load: 20 %
80 % V
DD
C-MOS load: 80 %
20 % V
DD
Time at 2.25
V
to be O s
Ta=+25
°
C,first year
Three drops on a hard board from 750 mm or excitation test with
29400 m/s
2
x 0.3 ms x 1/2 sine wave in 3 directions
Note:
Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is required.
Metal may be exposed on the top of this product. This won't affect any quality, reliability or electrical spec.
-0.5 V to +7.0 V
2.5 V ±0.25 V
2.21675 MHz to 41.0000 MHz
15 pF Max.
0.8 V
DD
Min.
0.2 V
DD
Max.
5 ns Max.
5 ns Max.
4 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
Actual size
Please contact us for inquiries
about the available frequency.
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