參數(shù)資料
型號: SFWI9624
廠商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先進的功率MOSFET
文件頁數(shù): 1/7頁
文件大小: 256K
代理商: SFWI9624
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -250V
Low R
DS(ON)
: 1.65
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
-250
-2.7
-1.7
-11
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
SFW/I9624
BV
DSS
= -250 V
R
DS(on)
= 2.4
I
D
= -2.7 A
182
-2.7
3.8
-4.8
3.1
38
0.3
- 55 to +150
300
3.29
40
62.5
--
--
--
O
1
O
O
1
O
1
2
O
3
1999 Fairchild Semiconductor Corporation
Rev. B
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