參數(shù)資料
型號(hào)： SFW9640
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-CHANNEL POWER MOSFET
中文描述： 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 261K
代理商： SFW9640
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -200V
Low R
DS(ON)
: 0.344
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
-200
-11
-7.0
-44
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
O
1
O
O
1
O
1
2
O
3
SFW/I9640
BV
DSS
= -200 V
R
DS(on)
= 0.5
I
D
= -11 A
807
-11
12.3
-5.0
3.1
123
0.98
- 55 to +150
300
1.02
40
62.5
--
--
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
SFWI9640 Advanced Power MOSFET
SFI9640 P-CHANNEL POWER MOSFET
SFWI9540 Advanced Power MOSFET
SFWI9620 Advanced Power MOSFET
SFI9620 Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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