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參數(shù)資料
| 型號： | SFT6650-3 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 10 AMP / 80 Volts 50 MHz PNP POWER DARLINGTON BIPOLAR TRANSISTOR |
| 中文描述： | 10安培/ 80伏特，50兆赫PNP功率達林頓雙極型晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SFT6650-3 |
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0089A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-3
SFT6650/3
10 AMP / 80 Volts
50 MHz
PNP POWER DARLINGTON
BIPOLAR TRANSISTOR
Features:
Low Saturation Voltage
Hermetically Sealed, Isolated Package
Direct Replacement for 2N6650
TX, TXV, S-Level Screening Available,
Equivalent to MIL-PRF-19500/527
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Maximum Base Current
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D1
P
D2
80
Volts
Volts
Volts
Amps
Amps
80
5
10
0.25
5
85
Power Dissipation
@ T
A
= 25oC
@ T
C
= 25oC
W
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Top & Tstg
-65 to +175
oC
R
q
JC
1.76
oC/W
TO-3
1.197
.875 MAX
2x .038
.675
.525 MAX
.135
MAX
.440
2x .205
.450
2x .312
MIN
2x .151
2x R.188 MAX
1
SEATING PLANE
2
1
1
THIS DIMENSION SHALL BE MEASURED
AT POINTS .050 - .055" BELOW THE
SEATING PLANE. WHEN GAGE IS NOT
USED, MEASUREMENT WILL BE MADE AT
SEATING PLANE.
THIS OUTLINE DOES NOT MEET THE
MINIMUM CRITERIA ESTABLISHED
BY JS-10 FOR REGISTRATION.
NOTES:
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