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參數(shù)資料
| 型號： | SFT5015-4 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.5 AMP 800 - 1000 VOLTS NPN TRANSISTOR |
| 中文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, LCC-4 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | SFT5015-4 |
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5013-4
thru
SFT5015-4
ELECTRICAL CHARACTERISTICS
RATING
V
V
Collector - Emitter Breakdown Voltage *
(I
C
= 200
μ
A, R
BE
= 1kOhm)
BV
CEO
BV
CER
UNIT
V
Emitter - Base Breakdown Voltage
(I
E
= 50
μ
A)
μ
A
Collector Cutoff Current
(V
CB
= 650/700/760V)
I
CBO
DC Current Gain *
nsec
nsec
μ
sec
nsec
Turn on Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 100V
I
C
= 100mA
I
B1
= I
B2
= 10mA
t
d
t
r
t
s
t
f
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
I
C
= 1mA; V
CE
= 10V
I
C
= 25mA; V
CE
= 10V
I
C
= 100mA; V
CE
= 10V
V
Collector - Base Breakdown Voltage
(I
C
= 200
μ
A)
BV
CBO
BV
EBO
Emitter Cutoff Current
(V
EB
= 4V)
μ
A
I
EBO
HFE
Collector - Emitter Saturation Voltage *
(I
C
= 25mA; I
B
= 2.5mA)
V
CE(SAT)
V
BE(SAT)
Current Gain Bandwidth Product *
I
C
= 10mA; V
CE
= 10V; f = 10MHz
Output Capacitance
V
CB
= 20V; I
E
= 0A; f = 1MHz
f
T
C
ob
pF
MHz
V
mV
400
800
900
1000
-
-
-
-
-
-
800
900
1000
6
-
20
40
20
-
-
25
-
-
-
-
-
12
50
200
1200
2
700
-
-
-
-
20
250
300
250
500
1.0
-
10
MAX
MIN
SYMBOL
(I
C
= 1mA)
SFT5013-4
SFT5014-4
SFT5015-4
SFT5013-4
SFT5014-4
SFT5015-4
T
A
= 25
o
C
T
A
= 100
o
C
Base - Emitter Saturation Voltage
(I
C
= 25mA; I
B
= 2.5mA)
NOTES:
*Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
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