參數(shù)資料
型號(hào)： SFS4936
廠商： Electronic Theatre Controls, Inc.
英文描述： Dual N-Channel MOSFET
中文描述： 雙N溝道MOSFET
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 807K
代理商： SFS4936
S FS 4936
Electrical Characteristics
( T
J
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
30
-
-
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 °C
-
29
-
mV/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
-
-
1
25
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
100
nA
Gate-Source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
1.0
-
3.0
V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS
= 10 V, I
D
= 5.8A
V
GS
= 4.5 V, I
D
= 4.7A
-
-
0.027
0.037
0.035
0.053
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=15V, f = 1MHz
-
600
-
pF
C
oss
C
rss
Output Capacitance
-
295
-
Reverse Transfer Capacitance
Dynamic Characteristics
-
90
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-on Delay Time
V
DD
=15V, I
D
=1A, R
G
=50
(Note 2,3)
-
9
28
ns
Rise Time
-
10
30
Turn-off Delay Time
-
85
180
Fall Time
-
40
90
Total Gate Charge
V
DS
=15V, V
GS
=10V, I
D
=5.8A
(Note 2,3)
-
20
26
nC
Gate-Source Charge
-
2.3
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
5
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Maximum Continuous Diode Forward Current
-
-
1.7
A
V
SD
Diode Forward Voltage
I
S
=1.7A, V
GS
=0V
(Note 2)
-
-
1.2
V
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch
2
Cu board.
2/6
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