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參數(shù)資料
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
Low-Level Gate Characteristics
I
GT
= 200 μA (Max) @ 25
o
C
Low Holding Current I
H
= 1 mA (Max) @ 25
o
C
Anode Common to Case
Hermetically Sealed
TX, TXV, S-Level Screening Available. Consult
Factory
SFS2510 thru SFS2540
25 AMPS
100
─
400 VOLTS
FAST SWITCHING
SILICON CONTROLLED
RECTIFIER
TO-48
MAXIMUM RATINGS
(
T
J
= 25
o
C UNLESS OTHERWISE NOTED, R
GK
= 1K
)
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
V
DRM
V
RRM
100
200
250
300
400
150
300
350
400
500
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t
≤
5.0 ms)
V
RSM
Volts
RMS On-State Current
(All Conduction Angles)
I
T (RMS)
35
Amps
Average On-State Current
T
C
= 50
o
C
I
T (AV)
25
Amps
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T
J
= 120
o
C, t = 8.3 ms)
I
TSM
210
Amps
Peak Gate Power
P
GM
60
Watts
Average Gate Power
P
G (AV)
1.0
Watts
Peak Gate Current
I
GM
10
Amps
Peak Gate Voltage
V
GM
15
Volts
Operating Junction Temperature Range
T
J
-65 to +135
o
C
Storage Temperature Range
Tstg
-65 to +150
o
C
Thermal Resistance, Junction to Case
R
θ
JC
1.45
o
C/W
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