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參數(shù)資料
| 型號： | SFS1829 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1.6 AMPS 200 Α 400 VOLTS SILICON CONTROLLED RECTIFIER |
| 中文描述： | 1.6 A, 400 V, SCR, TO-18 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 115K |
| 代理商： | SFS1829 |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
Low-Level Gate Characteristics
I
GT
= 200 μA (Max) @ 25
o
C
Low Holding Current I
H
= 1 mA (Max) @ 25
o
C
Anode Common to Case
Hermetically Sealed
TX, TXV, S-Level Screening Available. Consult
Factory
SFS1826 thru SFS1829
1.6 AMPS
200
─
400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS1826
SFS1827
SFS1828
SFS1829
SFS1826
SFS1827
SFS1828
SFS1829
V
DRM
V
RRM
200
250
300
400
300
350
400
500
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
V
RSM
Volts
RMS On-State Current
(All Conduction Angles)
Average On-State Current
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T
C
= 80
o
C )
I
T (RMS)
1.6
Amps
T
C
= 50
o
C
T
A
= 25
o
C
I
T (AV)
1.0
0.7
Amps
I
TSM
15
Amps
Peak Gate Power
P
GM
0.1
Watts
Average Gate Power
P
G (AV)
0.01
Watts
Peak Gate Current
I
GM
0.1
Amps
Peak Gate Voltage
V
GM
6.0
Volts
Operating Junction Temperature Range
T
J
-65 to +200
o
C
Storage Temperature Range
Tstg
-65 to +200
o
C
Thermal Resistance, Junction to Case
R
θ
JC
72
o
C/W
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