參數(shù)資料
型號(hào)： SFP9Z14
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel Power MOSFET(漏源電壓為-60V的P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 6.7 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 249K
代理商： SFP9Z14
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
175
o
C Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10
μ
A (Max.) @ V
DS
= -60V
Low R
DS(ON)
: 0.362
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
-60
-6.7
-4.7
-27
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
2
O
3
O
1
O
1
SFP9Z14
BV
DSS
= -60 V
R
DS(on)
= 0.5
I
D
= -6.7 A
115
-6.7
3.8
-5.5
38
0.25
- 55 to +175
300
3.95
--
62.5
--
0.5
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
SFP9Z24 P-Channel Power MOSFET(漏源電壓為-60V的P溝道功率MOS場(chǎng)效應(yīng)管)
SFP9Z34 P-Channel Power MOSFET(漏源電壓為-60V的P溝道功率MOS場(chǎng)效應(yīng)管)
SFR2955 Advanced Power MOSFET
SFU2955 Advanced Power MOSFET
SFRU2955 Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFP9Z24 功能描述:MOSFET PCh/60V/9.7a/0.28Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFP9Z34 功能描述:MOSFET TO-220 P-CH -60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFP9Z34_F080 功能描述:MOSFET P-Ch 60V 18A 0.14Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFPA16GBQ1BO4TO-C-QT-243-STD 制造商:SWISSBIT NA INC 功能描述:FLASH
SFPA16GBQ1BO4TO-I-QT-223 制造商:Swissbit 功能描述:
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