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參數(shù)資料
| 型號： | SFP840 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 874K |
| 代理商： | SFP840 |
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{
{
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Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
500
V
I
D
Continuous Drain Current(@T
C
= 25
°C)
8
A
Continuous Drain Current(@T
C
= 100
°C)
5.1
A
I
DM
Drain Current Pulsed
(Note 1)
32
±
30
A
V
GS
Gate to Source Voltage
V
E
AS
E
AR
dv/dt
Single Pulsed Avalanche Energy
(Note 2)
660
mJ
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
5
V/ns
P
D
Total Power Dissipation(@T
C
= 25 °C)
125
W
Derating Factor above 25 °C
1.0
W/°C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Typ.
Units
Min.
Max.
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
-
-
1
°C/W
Thermal Resistance, Case to Sink
-
0.5
-
°C/W
Thermal Resistance, Junction-to-Ambient
-
-
62
°C/W
S FP840
May, 2003. Rev. 0.
1/7
Features
■
High ruggedness
■
R
DS(on)
(Max 0.85
)@V
GS
=10V
■
Gate Charge
(Typical 48nC)
■
Improved dv/dt Capability, High ruggedness
■
100% Avalanche Tested
■
Maximum Junction Temperature Range
(150°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topolgy like a
electronic lamp ballast.
N-Channel MOSFET
S emiWell
Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
TO-220
123
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