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參數(shù)資料
| 型號： | SFH9305 |
| 元件分類： | 開關(guān) |
| 英文描述： | 3.28 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 76K |
| 代理商： | SFH9305 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT)
800
1000
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125
°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
0.18
0.27
0.046
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element)
(Note-1)
Inverter FWDi part (per 1 element)
(Note-1)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Symbol
Condition
Unit
Min.
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
Parameter
Limits
Typ.
Max.
UP
IGBT
21.4
5.3
VP
WP
UN
VN
WN
FWDi
21.4
–4.6
IGBT
65.0
5.3
FWDi
65.0
–4.6
IGBT
90.0
5.3
FWDi
90.0
–4.6
IGBT
36.0
–0.7
FWDi
36.0
–10.6
IGBT
51.0
–0.7
FWDi
51.0
–10.6
IGBT
76.0
–0.7
FWDi
76.0
–10.6
arm
axis
X
Y
(unit : mm)
2.15
2.35
3.50
2.0
0.8
1.0
2.8
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–IC = 100A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
0.3
—
1.65
1.85
2.50
0.65
0.20
0.35
1.10
0.35
—
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V
15V
VCC = 600V, IC = 100A
Tj = 125
°C
Inductive Load
(Fig. 3,4)
VCE = VCES, VD = 15V
(Fig. 5)
VD = 15V, IC = 100A
VCIN = 0V, Pulsed
(Fig. 1)
V
mA
V
s
Unit
Bottom view
X
Y
PN
U
V
W
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