參數(shù)資料
型號(hào)： SFH655A
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler DC-IN 1-CH Darlington DC-OUT 4-Pin PDIP
中文描述： Transistor Output Optocouplers Photodarlington Out Single CTR >600%
文件頁數(shù)： 3/8頁
文件大?。?/td> 133K
代理商： SFH655A
SFH655A
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 08-Aug-11
3
Document Number: 83667
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
According to DIN EN 60747-5-2 (VDE 0884) (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 10 mA
Reverse current
V
R
= 6 V
Capacitance
V
R
= 0 V, f = 1 MHz
OUTPUT
Collector emitter breakdown
voltage
Emitter collector breakdown
voltage
Collector emitter dark current
V
CE
= 40 V
Collector emitter capacitance
V
CE
= 0 V, f = 1 MHz
COUPLER
Collector emitter
saturation voltage
Coupling capacitance
V
I-O
= 0 V, f = 1 MHz
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
I
R
C
O
1.15
0.02
50
1.5
10
V
μA
pF
I
CE
= 100 μA
BV
CEO
55
V
I
EC
= 10 μA
BV
ECO
6
V
I
CEO
C
CE
12
13.5
400
nA
pF
I
F
= 20 mA, I
C
= 5 mA
SFH655A
V
CEsat
1
V
C
C
0.45
pF
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Current transfer ratio
I
F
= 1 mA, V
CE
= 2 V
PART
SFH655A
SYMBOL
CTR
MIN.
600
TYP.
MAX.
UNIT
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
1.669
kV
t
Tr
= 60 s, t
test
= 10 s,
(see fig. 2)
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
150 °C
(construction test only)
V
pd
1.424
kV
Insulation resistance
R
IO
R
IO
10
12
10
11
R
IO
10
9
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
Creepage distance
Clearance distance
Insulation thickness, reinforced
rated
Forward current
Power dissipation
Safety temperature
55/100/21
CTI
175
7
7
399
standard DIP-4
standard DIP-4
mm
mm
per IEC 60950 2.10.5.1
0.4
mm
I
si
P
so
T
si
275
400
175
mA
mW
°C
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