參數(shù)資料
型號(hào)： SFH640-3X019
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
文件頁數(shù)： 2/8頁
文件大?。?/td> 161K
代理商： SFH640-3X019
SFH640
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Sep-11
2
Document Number: 83682
For technical questions, contact:
optocoupler.answers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Surge collector current
Total power dissipation
COUPLER
V
CEO
V
CBO
V
EBO
I
C
I
C
P
diss
300
300
7.0
50
100
300
V
V
V
mA
mA
mW
t
p
10 ms
Isolation test voltage
between emitter and detector
V
ISO
5300
7500
10
12
10
11
V
RMS
V
PK
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Storage temperature range
Operating temperature range
0.4
mm
7
7
mm
mm
CTI
175
T
stg
T
amb
- 55 to + 150
- 55 to + 100
°C
°C
Soldering temperature
(1)
max. 10 s, dip soldering:
distance to seating plane
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 10 mA
Reverse voltage
I
R
= 10 μA
Reverse current
V
R
= 6 V
Capacitance
V
F
= 0 V, f = 1 MHz
Thermal resistance
OUTPUT
Collector emitter breakdown
voltage
R
BE
= 1 M
Voltage emitter base
I
EB
= 10 μA
Collector emitter capacitance
V
CE
= 10 V, f = 1 MHz
Collector base capacitance
V
CB
= 10 V, f = 1 MHz
Emitter base capacitance
V
EB
= 5 V, f = 1 MHz
Thermal resistance
COUPLER
Coupling capacitance
I
F
= 10 mA, I
C
= 3.2 mA
I
F
= 10 mA, I
C
= 5 mA
Collector emitter leakage
current
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
V
V
R
I
R
C
O
R
thja
1.1
1.5
V
V
μA
pF
K/W
6
0.01
25
750
10
I
CE
= 1 mA,
BV
CER
300
V
BV
BEO
C
CE
C
CB
C
EB
R
thja
7
V
pF
pF
pF
K/W
7
8
38
250
C
C
0.6
0.25
0.25
pF
V
V
Saturation voltage collector
emitter
SFH640-2
SFH640-3
V
CEsat
V
CEsat
0.4
0.4
V
CE
= 200 V, R
BE
= 1 M
I
CER
1
100
nA
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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