參數(shù)資料
型號(hào)： SFH640-1
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, DIP-6
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR 40-80%
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 110K
代理商： SFH640-1
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
709
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
Vishay Semiconductors
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
V
ISO
5300/7500
V
RMS
/V
PK
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
≥
10
12
≥
10
11
Ω
Ω
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Storage temperature range
Operating temperature range
≥
0.4
mm
≥
7
≥
7
mm
mm
CTI
175
T
stg
T
amb
- 55 to + 150
- 55 to + 100
°C
°C
Soldering temperature
(2)
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter breakdown
voltage
Voltage emitter base
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
I
R
= 10 μA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
V
V
R
I
R
C
O
R
thja
1.1
1.5
V
V
μA
pF
K/W
6
0.01
25
750
10
I
CE
= 1 mA,
R
BE
= 1 M
Ω
I
EB
= 10 μA
V
CE
= 10 V, f = 1 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 5 V, f = 1 MHz
BV
CER
300
V
BV
BEO
C
CE
C
CB
C
EB
R
thja
7
V
pF
pF
pF
K/W
7
8
38
250
C
C
0.6
0.25
0.25
0.25
pF
V
V
V
Saturation voltage collector
emitter
I
F
= 10 mA, I
C
= 2 mA
I
F
= 10 mA, I
C
= 3.2 mA
I
F
= 10 mA, I
C
= 5 mA
SFH640-1
SFH640-2
SFH640-3
V
CEsat
V
CEsat
V
CEsat
0.4
0.4
0.4
Collector emitter leakage
current
V
CE
= 200 V, R
BE
= 1 M
Ω
I
CER
1
100
nA
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFH640-2 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
SFH640-2 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P
SFH640-2X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
SFH640-3 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
SFH640-3X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100-200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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