
5–260
SFH636
HIGH SPEED 5.3 kV OPTOCOUPLER
Preliminary Data Sheet
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage.............................................................................3 V
DC Forward Current..................................................................25 mA
Surge Forward Current..................................................................1 A
tp
≤
1
μ
s, 300 pulses/sec.
Total Power Dissipation............................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................. –0.5 to 30 V
Output Voltage................................................................. –0.5 to 20 V
Output Current............................................................................8 mA
Total Power Dissipation..........................................................100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector
(refer to climate DIN 40046, part 2, Nov. 74) ........... 5300 VAC
Creepage........................................................................... 7 mm min.
Clearance .......................................................................... 7 mm min.
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ............................................ 175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...........................................................
V
IO
=500 V, T
A
=100
°
C .........................................................
Storage Temperature Range........................................–55 to +150
Ambient Temperature Range.......................................–55 to +100
J unction Temperature............................................................... 100
Soldering Temperature (t=10 sec. max.)................................. 260
Dip soldering: distance to seating plane
RMS
≥
≥
10
10
12
11
°
°
°
°
C
C
C
C
≥
1.5 mm
Package Dimensions in Inches (mm)
1
2
3
4
5
6
Cathode
VCC
Emitter
Collector
Anode
NC
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID.
6
5
4
1
2
3
18
°
typ.
4
°
typ.
FEATURES
High Speed Optocoupler without Base
Connection
GaAlAs Emitter
Integrated Detector with Photodiode and
Transistor
High Data Transmission Rate: 1 MBit/s
TTL Compatible
Open Collector Output
CTR at I
F
=16 mA, V
O
T
A
=25
°
C:
≥
19%
Good CTR Linearity Relative to Forward Current
Field Effect Stable by TRIOS
(TRansparent IOn Shield)
Low Coupling Capacitance
dV/dt: typ. 10 kV/
μ
s
Isolation Test Voltage: 5300 VAC
VDE 0884 Available with Option 1
UL Approval, File #E52744
APPLICATIONS
IGBT Drivers
Data Communications
Programmable Controllers
=0.4 V, V
CC
=4.5 V,
RMS
DESCRIPTION
The SFH636 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated pho-
todetector consisting of a photodiode and a high
speed transistor in a DIP-6 plastic package. The
device is functionally similar to 6N136 except there is
no base connection, and the electrical foot print is
different. Noise and dv/dt performance is enhanced
by not bringing out the base connection.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The
potential difference between the circuits to be cou-
pled should not exceed the maximum permissible
reference voltages.