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Document Number: 83675
www.vishay.com
Revision 17-August-01
2–249
Maximum Ratings
Emitter
Reverse Voltage.................................................................................. 6.0 V
DC Forward Current........................................................................±60 mA
Surge Forward Current (tP≤10 s) ....................................................±2.5 A
Total Power Dissipation.................................................................. 100 mW
Detector
Collector-emitter Voltage ..................................................................... 70 V
Emitter-collector Voltage..................................................................... 7.0 V
Collector Current .............................................................................. 50 mA
Collector Current (tP≤1.0 ms).......................................................... 100 mA
Total Power Dissipation.................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74........................................................................ 5300 VRMS
Creepage......................................................................................
≥7.0 mm
Clearance .....................................................................................
≥7.0 mm
Insulation Thickness between Emitter and Detector ....................
≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ................................................... 175
Isolation Resistance
VIO=500 V, TA=25°C....................................................................≥10
12
VIO=500 V, TA=100°C..................................................................≥10
11
Storage Temperature Range ............................................... –55 to +150
°C
Ambient Temperature Range............................................... –55 to +100
°C
Junction Temperature ....................................................................... 100
°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥1.5 mm)............................................. 260°C
Dimensions in Inches (mm)
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10
°
3
°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
4
3
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
FEATURES
High Current Transfer Ratios
– at 10 mA: 40–320%
– at 1.0 mA: 45% typical (>13)
Low CTR Degradation
Good CTR Linearity Depending on Forward
Current
Isolation Test Voltage, 5300 VRMS
High Collector-emitter Voltage, VCEO=70 V
Low Saturation Voltage
Fast Switching Times
Field-effect Stable by TRIOS
(TRansparent IOn Shield)
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100" (2.54 mm) Spacing
High Common-Mode Interference Immunity
(Unconnected Base)
Underwriters Lab File #52744
VDE 0884 Available with Option 1
SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620A features a high current transfer ratio,
low coupling capacitance and high isolation volt-
age. These couplers have a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon
planar phototransistor detector, and is incorporated
in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 VRMS or DC.
V
DE
SFH620A
5.3 kV TRIOS Optocoupler
AC Voltage Input