參數(shù)資料
型號： SFH619A-X007T
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler DC-IN 1-CH Darlington DC-OUT 4-Pin PDIP SMD T/R
中文描述： Transistor Output Optocouplers Photodarlington Out Single CTR > 1000%
文件頁數(shù)： 2/6頁
文件大小： 124K
代理商： SFH619A-X007T
SFH619A
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Jan-12
2
Document Number: 83674
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Derate linearly from 25 °C
Total power dissipation
Isolation test voltage
between emitter and detector
3.33
250
mW/°C
mW
P
tot
t = 1 s
V
ISO
5300
V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
≥
10
12
≥
10
11
Ω
Ω
°C
°C
Storage temperature
Operating temperature
- 55 to + 150
- 55 to + 100
Soldering temperature
(1)
max. 10 s, dip soldering: distance
to seating plane
≥
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
I
CE
= 100 μA
Emitter collector breakdown voltage
I
EC
= 100 μA
V
CE
= 200 V,T
A
= 25 °C
V
CE
= 200 V,T
A
= 100 °C
Collector emitter capacitance
V
CE
= 0 V, f = 1 MHz
COUPLER
I
F
= 1 mA, I
C
= 10 mA
I
F
= 10 mA, I
C
= 100 mA
Coupling capacitance
V
I-O
= 0 V, f = 1 MHz
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
V
F
I
R
C
O
1.2
0.02
14
1.5
10
V
μA
pF
BV
CEO
BV
ECO
I
CEO
I
CEO
C
CE
300
0.3
V
V
nA
nA
pF
Collector emitter dark current
10
200
20
39
Collector emitter saturation voltage
V
CEsat
V
CEsat
C
C
1
V
V
pF
0.3
1.2
0.6
CURRENT TRANSFER RATIO
PARAMETER
Coupling transfer ratio
TEST CONDITION
I
F
= 1 mA, V
CE
= 1 V
SYMBOL
CTR
MIN.
1000
TYP.
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
SYMBOL
t
r
t
r
t
f
t
f
t
on
t
on
t
off
t
off
MIN.
TYP.
3.5
1
14.5
20.5
4.5
1.5
29
53.5
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
Rise time
Fall time
Turn-on time
Turn-off time
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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