
Inneon Technologies, Corp. Optoelectronics Division Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.inneon.com/opto 1-800-777-4363
1
November 23, 1999–15
SFH610A/615A/617A
5.3 kV TRIOS Optocoupler
High Reliability
FEATURES
High Current Transfer Ratios
at 10 mA: 40–320%
at 1.0 mA: 60% typical (>13)
Low CTR Degradation
Good CTR Linearity Depending on Forward Current
Withstand Test Voltage, 5300 VRMS
High Collector-Emitter Voltage, VCEO=70 V
Low Saturation Voltage
Fast Switching Times
Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100" (2.54 mm) Spacing
High Common-Mode Interference Immunity
(Unconnected Base)
Underwriters Lab File #52744
VDE 0884 Available with Option 1
SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 VRMS or DC.
Specications subject to change.
V
DE
Maximum Ratings
Emitter
Reverse Voltage............................................................................6 V
DC Forward Current.................................................................60 mA
Surge Forward Current (tP
≤10 s).............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ..............................................................7 V
Collector Current .....................................................................50 mA
Collector Current (tP≤1 ms)....................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 VRMS
Creepage................................................................................
≥7 mm
Clearance ...............................................................................
≥7 mm
Insulation Thickness between Emitter and Detector ...........
≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ........................................
≥175
Isolation Resistance
VIO=500 V, TA=25°C.......................................................... ≥10
12
VIO=500 V, TA=100°C........................................................ ≥10
11
Storage Temperature Range ......................................–55 to +150
°C
Ambient Temperature Range......................................–55 to +100
°C
Junction Temperature .............................................................. 100
°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥1.5 mm)....................................260°C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
°
typ.
1.00 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10
°
3
°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
4
3
Emitter
Collector
Anode
Cathode
SFH610A
1
2
4
3
Emitter
Collector
Anode
Cathode
Dimensions in Inches (mm)
SFH615A/617A